METHOD FOR FORMING CONTACT OF SEMICONDUCTOR DEVICE

PURPOSE: A method for forming a contact of a semiconductor device is provided to prevent deterioration of contact resistance of a gate electrode and a bit line by forming selectively an anti-diffusion layer. CONSTITUTION: A semiconductor substrate(100) including a peripheral region is provided. An isolation layer(110) is formed on the semiconductor substrate in order to define an active region. A transistor(140) is formed on the active region. At this time, a gate electrode of the transistor is formed with tungsten silicide. An insulating layer(150a) is formed on the entire surface of the semiconductor substrate in order to coat the transistor. The first and the second contact holes are formed by removing selectively the insulating layer. An anti-diffusion layer(170) is formed on the exposed surface of the gate electrode. A barrier layer(180a) is formed on the insulating layer. A conductive layer(190a) is formed by burying the first and the second contact holes. A line(200) is formed by patterning the barrier layer and the conductive layer.