ETCHING RESISTANT COMPOSITION FOR PHOTOETCHING AT HIGH TEMPERATURE AND HIGH PRESSURE

PURPOSE: An etching resistant composition is provided to satisfy the physical properties required for the micro-photoetching process of a metal film and to prevent defects due to the dissolution of an etching resistant, thereby reducing the cost and increasing the productivity. CONSTITUTION: The etching resistant composition comprises 55-85 parts by weight of a photo-polymerizable oligomer; 10-40 parts by weight of a photo-polymerizable monomer having at least one acroyl or methacroyl group; 5-10 parts by weight of a photo-polymerization initiator which is acetophenone or benzyl ketal compound; 0.1-0.5 parts by weight of a leveling agent or an anti-foaming agent; and 0.05 parts of weight or less of a stabilizing agent which is hydroquinone or methoxy hydroquinone. The photopolymerizable oligomer(ABC) is prepared by reacting the product(AB) obtained by reacting a dibasic carboxylic acid compound or dibasic carboxylic anhydride(A) and an acrylate or methacrylate compound(B) having at least one hydroxyl group, with an acrylate or methacrylate compound(C) having epoxy group.