METHOD FOR MANUFACTURING CMOS IMAGE SENSOR

PURPOSE: A method for manufacturing a CMOS image sensor is provided to reduce cross talk and leakage current by forming a channel stop ion-implanted region using a self-aligned mask. CONSTITUTION: A buffer oxide layer(22), a pad nitride layer(23) and an ARC(Anti-Reflective Coating) layer(24) are stacked on a substrate. The first photoresist pattern(25) with the first opening part is formed on the resultant structure. The stacked structure is etched to expose the substrate. A trench is formed by selectively etching the exposed substrate. The second photoresist pattern(26) with the second opening part is formed on the first photoresist pattern, wherein the second opening part is wider than that of the first opening part. A channel stop ion-implanted region(27) is then formed in the substrate.