CMOS IMAGE SENSOR HAVING TRENCH FILLED WITH SELECTIVE EPITAXIAL GROWN AND MANUFACTURING METHOD THEREOF

PURPOSE: A CMOS image sensor and a method for manufacturing the same are provided to reduce effectively defects in a trench by filling the trench with SEG(Selective Epitaxial Growth). CONSTITUTION: In a CMOS image sensor including doping regions for a photodiode and a transfer transistor, a trench i...

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1. Verfasser:	SA, SEUNG HUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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