CMOS IMAGE SENSOR HAVING TRENCH FILLED WITH SELECTIVE EPITAXIAL GROWN AND MANUFACTURING METHOD THEREOF

CMOS IMAGE SENSOR HAVING TRENCH FILLED WITH SELECTIVE EPITAXIAL GROWN AND MANUFACTURING METHOD THEREOF

PURPOSE: A CMOS image sensor and a method for manufacturing the same are provided to reduce effectively defects in a trench by filling the trench with SEG(Selective Epitaxial Growth). CONSTITUTION: In a CMOS image sensor including doping regions for a photodiode and a transfer transistor, a trench i...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: SA, SEUNG HUN
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PURPOSE: A CMOS image sensor and a method for manufacturing the same are provided to reduce effectively defects in a trench by filling the trench with SEG(Selective Epitaxial Growth). CONSTITUTION: In a CMOS image sensor including doping regions for a photodiode and a transfer transistor, a trench is formed in a substrate(31). A silicon layer(32) is filled in the trench by SEG. The transfer transistor is formed on the substrate. The doping regions for the photodiode are formed in the substrate between the silicon layer and the transfer transistor.