METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to improve productivity and CD uniformity of the contact hole by using resist reflow processing. CONSTITUTION: A contact hole(150) is formed to expose a wafer by using a resist pattern(100), wherein DICD(Development I...

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Bibliographische Detailangaben
Hauptverfasser:	KO, CHA WON, SUN, GYU TAE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for forming a contact hole of a semiconductor device is provided to improve productivity and CD uniformity of the contact hole by using resist reflow processing. CONSTITUTION: A contact hole(150) is formed to expose a wafer by using a resist pattern(100), wherein DICD(Development Inspection Critical Dimension) of the contact hole is 180 nm. The first reflow processing is performed to reduce the size of contact hole, wherein the first AFCD(After Reflowing Critical Dimension) is 165 nm. The second reflow processing is performed to reduce the size of the contact hole, wherein the second AFCD is 140 nm.