CMOS image sensor and method for fabricating thereof

PURPOSE: A CMOS image sensor and a method for manufacturing the same are provided to improve capacity of a photodiode and property of a transistor by forming a doping region at lower portions of a trench isolation layer and a gate insulating layer. CONSTITUTION: A trench isolation layer(35) is forme...

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1. Verfasser:	SA, SEUNG HUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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