Method for manufacturing a semiconductor device

PURPOSE: A method for manufacturing a semiconductor device is provided to restrain short channel effect by forming a shallow junction region having high doping concentration using mixed ion implantation and heat treatment. CONSTITUTION: A gate electrode(112) is formed on a semiconductor substrate(10...

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Bibliographische Detailangaben
1. Verfasser:	SA, SEUNG HUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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