Method of forming cell transistor for DRAM devices

PURPOSE: A method for forming a cell transistor of DRAM(dynamic random access memory) device is provided to eliminate a problem arising from short channel effect by increasing the length of a channel while a shoulder margin between a contact plug and a gate is increased to maintain a space for preve...

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1. Verfasser:	JUNG, MUN YEONG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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