Method of forming Cobalt layer

PURPOSE: A method for forming a cobalt layer is provided to deposit a pure cobalt layer by removing a native oxide layer and the oxygen and carbon contained in a cobalt-metal organic source using the first and second radical treatment. CONSTITUTION: A silicon substrate is loaded in a reaction chamber. The first radical treatment is carried out on the silicon substrate. A cobalt-metal organic source layer is deposited on the silicon substrate by supplying a cobalt-metal organic source to the reaction chamber. The second radical treatment is carried out on the resultant structure for forming a cobalt layer on the silicon substrate. Preferably, the first radical treatment is carried out by using one selected from a group consisting of hydrogen and fluorine radical. Preferably, the second radical treatment is carried out by using hydrogen radicals. 코발트막의 형성방법을 제공한다. 상기 방법에 따르면, 제 1 라디칼 처리로 실리콘기판 상의 자연산화막을 제거하고 제 2 라디칼 처리로 코발트-금속유기물 소스에 함유된 산소와 탄소를 제거함으로써, 순수한 코발트막을 증착할 수 있다.