Liquid Crystal Display and fabrication method of thereof

PURPOSE: An LCD(Liquid Crystal Display) and a manufacturing method thereof are provided to implement a high aperture ratio and a high resolution by using copper as the second metal layer, that is, a metal forming a source/drain electrode and forming the source/drain electrode through a wet etching m...

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description PURPOSE: An LCD(Liquid Crystal Display) and a manufacturing method thereof are provided to implement a high aperture ratio and a high resolution by using copper as the second metal layer, that is, a metal forming a source/drain electrode and forming the source/drain electrode through a wet etching method. CONSTITUTION: A gate electrode(33) and a gate line are formed on a substrate(31) by the first mask. Thereafter, an inorganic material such as SiNx or SiO2, an intrinsic semiconductor material such as pure amorphous silicon, a semiconductor material in which n+ or p+ type impurity is added and a low resistance metal such as copper are continuously deposited on the substrate(31), thereby forming a gate insulation film layer(37), an intrinsic semiconductor layer(39), an impurity semiconductor layer(41) and a copper layer. A photoresist(PR)(59) is formed at a portion including a region for forming a channel portion. A half tone portion(H/T)(61) having a relatively thin PR thickness is formed at the region for forming the channel portion. After removing the PR, the copper layer of the H/T portion(61) is removed through the wet etching, thereby forming the source/drain electrodes(45,47). 본 발명에 의한 액정표시장치는, 일반적인 4마스크 액정표시장치 제조공정에 의해 순차적으로 형성되는 게이트 전극 및 게이트 라인, 게이트 절연막, 진성 반도체층, 불순물 반도체층, 데이터 라인 및 소스/ 드레인 전극, 화소전극으로 구성된 액정표시장치에 있어서, 상기 데이터 라인 및 소스/ 드레인 전극이 구리로 형성되며, 상기 소스/ 드레인 전극은 습식 식각에 의해 분리되어 형성됨을 특징으로 한다. 이와 같은 본 발명에 따르면, 소스/ 드레인 전극 및 데이터 라인 등을 이루는 금속을 저 저항 물질인 구리로 함으로써 고개구율, 고해상도 액정표시장치를 구현할 수 있고, 또한, 상기 소스/ 드레인 전극을 형성함에 있어 습식 식각 방식을 이용함으로써 4마스크 방식으로 액정표시장치를 형성할 수 있는 장점이 있다.
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CONSTITUTION: A gate electrode(33) and a gate line are formed on a substrate(31) by the first mask. Thereafter, an inorganic material such as SiNx or SiO2, an intrinsic semiconductor material such as pure amorphous silicon, a semiconductor material in which n+ or p+ type impurity is added and a low resistance metal such as copper are continuously deposited on the substrate(31), thereby forming a gate insulation film layer(37), an intrinsic semiconductor layer(39), an impurity semiconductor layer(41) and a copper layer. A photoresist(PR)(59) is formed at a portion including a region for forming a channel portion. A half tone portion(H/T)(61) having a relatively thin PR thickness is formed at the region for forming the channel portion. After removing the PR, the copper layer of the H/T portion(61) is removed through the wet etching, thereby forming the source/drain electrodes(45,47). 본 발명에 의한 액정표시장치는, 일반적인 4마스크 액정표시장치 제조공정에 의해 순차적으로 형성되는 게이트 전극 및 게이트 라인, 게이트 절연막, 진성 반도체층, 불순물 반도체층, 데이터 라인 및 소스/ 드레인 전극, 화소전극으로 구성된 액정표시장치에 있어서, 상기 데이터 라인 및 소스/ 드레인 전극이 구리로 형성되며, 상기 소스/ 드레인 전극은 습식 식각에 의해 분리되어 형성됨을 특징으로 한다. 이와 같은 본 발명에 따르면, 소스/ 드레인 전극 및 데이터 라인 등을 이루는 금속을 저 저항 물질인 구리로 함으로써 고개구율, 고해상도 액정표시장치를 구현할 수 있고, 또한, 상기 소스/ 드레인 전극을 형성함에 있어 습식 식각 방식을 이용함으로써 4마스크 방식으로 액정표시장치를 형성할 수 있는 장점이 있다.</description><edition>7</edition><language>eng ; kor</language><subject>DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING ; FREQUENCY-CHANGING ; NON-LINEAR OPTICS ; OPTICAL ANALOGUE/DIGITAL CONVERTERS ; OPTICAL LOGIC ELEMENTS ; OPTICS ; PHYSICS ; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF</subject><creationdate>2004</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040605&amp;DB=EPODOC&amp;CC=KR&amp;NR=20040046384A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20040605&amp;DB=EPODOC&amp;CC=KR&amp;NR=20040046384A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>PARK, CHANG SEO</creatorcontrib><creatorcontrib>SONG, IL NAM</creatorcontrib><title>Liquid Crystal Display and fabrication method of thereof</title><description>PURPOSE: An LCD(Liquid Crystal Display) and a manufacturing method thereof are provided to implement a high aperture ratio and a high resolution by using copper as the second metal layer, that is, a metal forming a source/drain electrode and forming the source/drain electrode through a wet etching method. CONSTITUTION: A gate electrode(33) and a gate line are formed on a substrate(31) by the first mask. Thereafter, an inorganic material such as SiNx or SiO2, an intrinsic semiconductor material such as pure amorphous silicon, a semiconductor material in which n+ or p+ type impurity is added and a low resistance metal such as copper are continuously deposited on the substrate(31), thereby forming a gate insulation film layer(37), an intrinsic semiconductor layer(39), an impurity semiconductor layer(41) and a copper layer. A photoresist(PR)(59) is formed at a portion including a region for forming a channel portion. A half tone portion(H/T)(61) having a relatively thin PR thickness is formed at the region for forming the channel portion. 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CONSTITUTION: A gate electrode(33) and a gate line are formed on a substrate(31) by the first mask. Thereafter, an inorganic material such as SiNx or SiO2, an intrinsic semiconductor material such as pure amorphous silicon, a semiconductor material in which n+ or p+ type impurity is added and a low resistance metal such as copper are continuously deposited on the substrate(31), thereby forming a gate insulation film layer(37), an intrinsic semiconductor layer(39), an impurity semiconductor layer(41) and a copper layer. A photoresist(PR)(59) is formed at a portion including a region for forming a channel portion. A half tone portion(H/T)(61) having a relatively thin PR thickness is formed at the region for forming the channel portion. After removing the PR, the copper layer of the H/T portion(61) is removed through the wet etching, thereby forming the source/drain electrodes(45,47). 본 발명에 의한 액정표시장치는, 일반적인 4마스크 액정표시장치 제조공정에 의해 순차적으로 형성되는 게이트 전극 및 게이트 라인, 게이트 절연막, 진성 반도체층, 불순물 반도체층, 데이터 라인 및 소스/ 드레인 전극, 화소전극으로 구성된 액정표시장치에 있어서, 상기 데이터 라인 및 소스/ 드레인 전극이 구리로 형성되며, 상기 소스/ 드레인 전극은 습식 식각에 의해 분리되어 형성됨을 특징으로 한다. 이와 같은 본 발명에 따르면, 소스/ 드레인 전극 및 데이터 라인 등을 이루는 금속을 저 저항 물질인 구리로 함으로써 고개구율, 고해상도 액정표시장치를 구현할 수 있고, 또한, 상기 소스/ 드레인 전극을 형성함에 있어 습식 식각 방식을 이용함으로써 4마스크 방식으로 액정표시장치를 형성할 수 있는 장점이 있다.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record>
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subjects DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING
FREQUENCY-CHANGING
NON-LINEAR OPTICS
OPTICAL ANALOGUE/DIGITAL CONVERTERS
OPTICAL LOGIC ELEMENTS
OPTICS
PHYSICS
TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
title Liquid Crystal Display and fabrication method of thereof
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