method for manufacturing metal line in semiconductor device

PURPOSE: A method for forming a metal line of a semiconductor device is provided to restrain the generation of tungsten plug fall-down and Ti loss under a plasma dry etching process by forming a double spacer made of a Ti layer and an oxide layer. CONSTITUTION: A lower metal line(102) is formed on a...

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Bibliographische Detailangaben

1. Verfasser:	HAN, SEUNG HUI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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