Method for manufacturing a semiconductor device

PURPOSE: A method for manufacturing a semiconductor device is provided to obtain a uniform metal silicide layer with small grain size by implanting silicon ions into a source/drain junction region. CONSTITUTION: A gate electrode(108) made of SiGe is formed on a semiconductor substrate(100). A source...

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Bibliographische Detailangaben

1. Verfasser:	SA, SEUNG HUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
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