Method for manufacturing a semiconductor device
PURPOSE: A method for manufacturing a semiconductor device is provided to obtain a uniform metal silicide layer with small grain size by implanting silicon ions into a source/drain junction region. CONSTITUTION: A gate electrode(108) made of SiGe is formed on a semiconductor substrate(100). A source...
Gespeichert in:
| 1. Verfasser: | |
|---|---|
| Format: | Patent |
| Sprache: | eng ; kor |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| Zusammenfassung: | PURPOSE: A method for manufacturing a semiconductor device is provided to obtain a uniform metal silicide layer with small grain size by implanting silicon ions into a source/drain junction region. CONSTITUTION: A gate electrode(108) made of SiGe is formed on a semiconductor substrate(100). A source/drain junction region(124) are formed in the substrate. Silicon ions are implanted into the gate electrode and the source/drain junction region. Then, a metal film is deposited on the resultant structure. By annealing the resultant structure, a uniform metal silicide layer(130) is formed on the gate electrode and the source/drain junction region by reaction between the implanted silicon ions and metal.
본 발명은 반도체 소자의 제조방법에 관한 것으로, 금속 실리사이드층을 형성하기 위한 금속층 증착공정 전에 게이트 전극, 소오스 및 드레인 접합영역에 실리콘 이온을 주입함으로써 그레인 사이즈가 작은 균일한 금속 실리사이드층을 형성할 수 있는 반도체 소자의 제조방법을 개시한다. |
|---|