Method for manufacturing a semiconductor device
PURPOSE: A method for manufacturing a semiconductor device is provided to obtain a uniform metal silicide layer by using ion implantation processing instead of deposition processing. CONSTITUTION: A gate electrode(108) is formed on a semiconductor substrate(100). A source and drain junction region(1...
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| Format: | Patent |
| Sprache: | eng ; kor |
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| Zusammenfassung: | PURPOSE: A method for manufacturing a semiconductor device is provided to obtain a uniform metal silicide layer by using ion implantation processing instead of deposition processing. CONSTITUTION: A gate electrode(108) is formed on a semiconductor substrate(100). A source and drain junction region(124) are formed in the substrate. A metal ion implanted region is formed on the gate electrode and the source/drain junction region by implanting metal ions. A uniform metal silicide layer(130) is formed by reacting the metal ions to silicon using annealing.
본 발명은 반도체 소자의 제조방법에 관한 것으로, 금속 실리사이드층을 형성하기 위한 열처리공정 전에 금속층을 증착공정을 통해 형성하지 않고 이온주입공정을 통해 형성함으로써 금속 실리사이드층이 형성될 영역의 깊이 조절이 가능하고, 반도체 기판의 실리콘을 비정질화시킬 수 있어 균일한 금속 실리사이드층을 형성할 수 있는 반도체 소자의 제조방법을 개시한다. |
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