METHOD FOR FABRICATING ALUMINUM NITRIDE SUBSTRATE TO FABRICATE OPTIMIZED AlN SUBSTRATE FOR SUPPORT UNIT FOR ELECTRONIC PART OF LOW VOLTAGE APPLICATION PART

PURPOSE: A method for fabricating an aluminum nitride substrate is provided to fabricate an optimized AlN substrate for a support unit for an electronic part of a low voltage application part by spraying powder including AlN particles on the support unit at a high temperature and a high speed. CONST...

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Hauptverfasser: JARRIGE JEAN, FERRATO MARC, PETITBON ALAIN
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:PURPOSE: A method for fabricating an aluminum nitride substrate is provided to fabricate an optimized AlN substrate for a support unit for an electronic part of a low voltage application part by spraying powder including AlN particles on the support unit at a high temperature and a high speed. CONSTITUTION: Powder is sprayed on the support unit at a high temperature and a high speed to form a substrate. The powder including the AlN particles are covered with an oxide precursor material layer that forms a liquid in the periphery of the AlN particles during a spray process and is selected from an oxide precursor material for forming an oxide.