SLURRY FOR MECHANICAL POLISHING (CMP) OF METALS AND USE THEREOF

PURPOSE: Slurry compositions that are useful for polishing or planarizing a surface are provided, and polishing processes employing the compositions are provided. CONSTITUTION: The slurry composition comprises about 0.5 to about 6% by weight of the abrasive particles, about 1 to 50 g/l of the oxidiz...

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Hauptverfasser: LOFARO MICHAEL FRANCIS, KRISHNAN MAHADEVAIYER, TORNELLO JAMES ANTHONY, COBB MICHAEL ADDITION, DAVIS KENNETH MORGAN, SCHAFFER DEAN ALLEN, MACDONALD MICHAEL JOSEPH, COTE WILLIAM, ESTES SCOTT ALAN, WHITE ERIC JEFFREY, CANAPERI DONALD FRANCIS, SLUSSER GEORGE JAMES, GORDON EDWARD JACK, HANNAH JAMES WILLARD, BRIGHAM MICHAEL TODD
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:PURPOSE: Slurry compositions that are useful for polishing or planarizing a surface are provided, and polishing processes employing the compositions are provided. CONSTITUTION: The slurry composition comprises about 0.5 to about 6% by weight of the abrasive particles, about 1 to 50 g/l of the oxidizer, about 0.1 to about 100 ml/l of the surface active agent, about 0.001 to about 20 g/l of the chloride ion source, and about 0.001 to about 20 g/l of the sulfate ion source. The method for polishing a surface comprises the steps of providing on the surface a slurry composition comprising abrasive particles, an oxidizer, a surface active agent, a chloride ion source and a sulfate ion source; and polishing the surface by contacting it with a polishing pad, wherein the surface is selected from the group consisting of copper, aluminum, tungsten, and their alloys.