METHOD OF MANUFACTURE SEMICONDUCTOR DEVICE

PURPOSE: A method for manufacturing a semiconductor device is provided to be capable of increasing the capacitance of a capacitor without the deterioration of integration degree. CONSTITUTION: A silicon growth layer(23) is formed at the predetermined upper portion of a silicon substrate(21). After a...

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Bibliographische Detailangaben

1. Verfasser:	SA, SEUNG HUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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