MEMORY DEVICE WITH FLEXIBLE HYBRID MEMORY ELEMENT

MEMORY DEVICE WITH FLEXIBLE HYBRID MEMORY ELEMENT

PURPOSE: A flexible hybrid memory element is provided to be capable of obtaining a low-priced memory cell array at a low production cost. CONSTITUTION: A memory cell apparatus includes a flexible hybrid memory element. The flexible hybrid memory element includes a flexible first conductive layer(320...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: TAUSSIG CARL PHILIP, PERLOV CRAIG, JACKSON WARREN B
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:PURPOSE: A flexible hybrid memory element is provided to be capable of obtaining a low-priced memory cell array at a low production cost. CONSTITUTION: A memory cell apparatus includes a flexible hybrid memory element. The flexible hybrid memory element includes a flexible first conductive layer(320) formed adjacent to a flexible substrate(310). A flexible diode structure(330) is formed adjacent to the flexible first conductor(320). A flexible switch(350) is formed adjacent to the flexible diode structure. A flexible second conductive layer(360) is formed adjacent to the flexible switch. The flexible switch is generally formed from an organic material. The flexible diode structure is generally formed from a disordered, inorganic material. The flexible switch(350) is formed to create a high resistance path when a threshold amount of current is passed through the flexible switch.