Organometallic Precursors for Forming Metal Alloy Pattern and Method for Forming Metal Alloy Pattern Using The Same

PURPOSE: Organometallic precursors for forming a metal alloy pattern and a method for forming a metal alloy pattern using the same are provided, thereby forming a metal alloy pattern having improved adhesion to a substrate, heat resistance and weather resistance without using additional photoresist...

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Hauptverfasser:	SON, HAE JEONG, BYUN, YEONG HUN, YOON, BYEONG GI, HWANG, SUN TAEK
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY FREQUENCY-CHANGING HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS MATERIALS THEREFOR METALLURGY NON-LINEAR OPTICS OPTICAL ANALOGUE/DIGITAL CONVERTERS OPTICAL LOGIC ELEMENTS OPTICS ORGANIC CHEMISTRY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS PRINTED CIRCUITS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF
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Zusammenfassung:	PURPOSE: Organometallic precursors for forming a metal alloy pattern and a method for forming a metal alloy pattern using the same are provided, thereby forming a metal alloy pattern having improved adhesion to a substrate, heat resistance and weather resistance without using additional photoresist resins. CONSTITUTION: Organometallic precursors for forming a metal alloy pattern is prepared by mixing a compound of the formula(1) of MmLnXp and a compound of the formula(2) of R'aD(CH2)bM'(OR')3 in a weight ratio of 99.9:0.01 to 80:20, wherein M is transition metal selected from Ag, Au and Cu; L is neutral ligand selected from amine, phosphine, phosphite and phosphine oxide, arsine and thiol; X is anion selected from halogen, hydroxy, cyano, nitro, nitrate, nitroxyl, azide, thiocyanato, isothiocyanato, tetraalkylborate, tetrahaloborate, hexafluorophosphate, triflate, tosylate, sulfate and carbonate; m is an integer of 1 to 10; n is an integer of 1 to 40; p is an integer of 0 to 10; M' is main group metal selected from Si, Ge and Sn; D is donor atom selected from N, P, O and S; R' is hydrogen, C1-C5 alkyl or C1-C5 N or O containing functional group; R' is C1-C10 linear or branched chain alkyl; and a is an integer of 1 to 2; and b is an integer of 0 to 5. 본 발명은 합금 패턴 형성용 유기금속 전구체 혼합물 및 이를 이용한 합금 패턴 형성방법에 관한 것으로, 보다 상세하게는 하기 화학식 1로 표시되는 화합물과 하기 화학식 2로 표시되는 화합물을 그 금속 중량비가 99.99:0.01~80:20이 되도록 혼합하여 얻어진 합금 패턴 형성용 유기금속 전구체 혼합물에 관한 것이며, 본 발명에 의해 별도의 감광성 수지를 사용하지 않고 직접적인 노광에 의해 기판에 대한 접착력, 내열성 및 내후성이 강화된 합금 패턴을 형성할 수 있다. [화학식 1] 상기 식에서 M은 Ag, Au 및 Cu 로 구성된 군에서 선택된 전이금속이고; L은 아민 화합물, 포스핀, 포스파이트(phosphite) 및 포스핀옥사이드 화합물, 아르신 화합물 및 티올(thiol) 화합물로 이루어진 군에서 선택된 중성 배위자이며; X는 할로겐, 히드록시, 시아노, 니트로(NO), 니트레이트(NO), 니트록실, 아지드, 티오시아네이토, 이소티오시아네이토, 테트라알킬보레이트, 테트라할로보레이트, 헥사플루오로포스페이트(PF), 트리플레이트(CFSO), 토실레이트(Ts), 술페이트(SO) 및 카보네이트(CO)로 이루어진 군에서 선택된 음이온이고; m은 1~10의 정수이며; n은 1~40의 정수이고; p는 0~10의 정수이다. [화학식 2] 상기 식에서 M'은 Si, Ge 및 Sn 으로 구성된 군에서 선택된 주족금속이고; D는 N, P, O 및 S로 이루어지는 군에서 선택된 주게원자이며; R'는 각각 수소원자, 탄소수 1~5개의 알킬기 또는 탄소수 1~5개의 N 또는 O를 포함하는 작용기이고; R"는 탄소수 1~10개의 선형 또는 가지형 알킬기이며; a는 1~2의 정수이고; b는 0~5의 정수이다.