Method for forming trench type isolation layer in semiconductor device

PURPOSE: A method for manufacturing a trench isolation layer of a semiconductor device is provided to restrain the warpage of a wafer caused by stress-strain of a front and back film of the wafer. CONSTITUTION: The first and second pad oxide layers(21a,21b) are formed on a front side and a back side...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	PI, SEUNG HO
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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