THERMAL ANNEAL METHOD OF MAGNETIC TUNNEL JUNCTION AND MAGNETIC TUNNELING JUNCTION FABRICATED BY THE METHOD

PURPOSE: A magnetic tunnel junction device and a thermal anneal method thereof are provided to improve the TMR(Tunneling Magnetoresistance) rate and optimize the characteristics of the device in a shorter time more effectively by reducing the bent of an oxide layer(Tunnel Barrier Layer). CONSTITUTIO...

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Bibliographische Detailangaben

Hauptverfasser:	HA, JAE GEUN, SHIN, GYEONG HO, LEE, U YEONG, LEE, GYEONG IL, PARK, YEONG JUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRICITY INDUCTANCES INFORMATION STORAGE INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORDCARRIER AND TRANSDUCER MAGNETS PHYSICS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES TRANSFORMERS
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