MONOLITHIC MICROWAVE INTEGRATED CIRCUIT COMPRISING BIAS COMPENSATING CIRCUIT

PURPOSE: A monolithic microwave integrated circuit(MMIC) comprising a bias compensating circuit is provided, which can improve a bias compensation efficiency while a threshold voltage of the MMIC and an ambient temperature are changed, and can perform a stable bias compensation as to a variation of...

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Bibliographische Detailangaben
Hauptverfasser: CHOI, JA HA, KWON, TAE WOON, SHIN, SANG MUN, KIM, SE YEOL
Format: Patent
Sprache:eng ; kor
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Zusammenfassung:PURPOSE: A monolithic microwave integrated circuit(MMIC) comprising a bias compensating circuit is provided, which can improve a bias compensation efficiency while a threshold voltage of the MMIC and an ambient temperature are changed, and can perform a stable bias compensation as to a variation of a power supply voltage. CONSTITUTION: The monolithic microwave integrated circuit(MMIC) comprises a microwave amplification part(10) comprising the first field effect transistor(Q1) whose gate is connected to a signal input port and a drain is connected to a signal output port, and a bias compensation part(30) to perform a bias compensation by being connected to the gate of the first field effect transistor. The bias compensation part comprises the second field effect transistor(Q3) sharing a power supply voltage with the first field effect transistor and having a grounded source. And the bias compensation circuit comprises a DC level shift circuit so that a voltage variation between the gate and the source of the second field effect transistor is higher than a voltage variation between the gate and the source of the first field effect transistor.