METHOD OF FABRICATING NOR TYPE FLASH MEMORY DEVICE

PURPOSE: A fabrication method of NOR-type flash memory devices is provided to improve a step-coverage and the surface topology of a common source line by forming a uniform impurity diffusion layer on a buried common source line. CONSTITUTION: An isolation layer(105) is formed at a semiconductor subs...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	LEE, UN GYEONG, SONG, YUN HEUP
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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