METHOD FOR FORMING DUMMY PATTERN FOR GATE POLY

PURPOSE: A method for forming a dummy pattern for gate poly is provided to improve a current characteristic and a voltage characteristic by compensating ADI(After Developing Inspection) critical dimension and ACI(After Cleaning Inspection) critical dimension. CONSTITUTION: A gate poly dummy pattern(...

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Bibliographische Detailangaben

Hauptverfasser:	YOO, JAE CHEOL, WANG, SEON JONG
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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