ZNO/SI HETEROJUNCTION PHOTODIODE AND FABRICATING METHOD THEREOF

ZNO/SI HETEROJUNCTION PHOTODIODE AND FABRICATING METHOD THEREOF

PURPOSE: A ZnO/Si heterojunction photodiode is provided to simply embody a photodiode through a single deposition process of a ZnO thin film by using the ZnO thin film as a visible ray transmission window, and to increase quantum efficiency by 50 percent through a thickness control of the ZnO thin f...

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Bibliographische Detailangaben
Hauptverfasser: CHOI, WON GUK, JUNG, HYEONG JIN, LIM, SEONG IL, SONG, JONG HAN
Format: Patent
Sprache:eng ; kor
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:PURPOSE: A ZnO/Si heterojunction photodiode is provided to simply embody a photodiode through a single deposition process of a ZnO thin film by using the ZnO thin film as a visible ray transmission window, and to increase quantum efficiency by 50 percent through a thickness control of the ZnO thin film and crystallinity. CONSTITUTION: A heterojunction photodiode includes a silicon substrate and a zinc oxide layer formed on the silicon substrate. The silicon substrate is of a p-type conductivity type, and the zinc oxide layer is of an n-type conductivity type. The zinc oxide layer has an energy band gap of 3.1-3.2 electron-volt.