NOVEL GROUP IV METAL PRECURSOR AND CHEMICAL VAPOR DEPOSITION METHOD USING THE SAME

PURPOSE: A novel group IV metal precursor is provided which displays superior volatility and thermal characteristics, has excellent chemical stability for hydrolysis, and is particularly suitable for the formation of a multi-component metal oxide thin film comprising a group IV metal such as titanium, and a chemical vapor deposition method using the same is provided. CONSTITUTION: The metal organic precursor for manufacturing a metal oxide thin film consists of a negative bivalent tridentate ligand(L) represented as in the following Formula 1 and a quadrivalent group IV metal(M), and represented as M(L)2:£Formula 1|where each of R1 and R2 are linear or branched alkyl groups having carbon numbers of 1 to 8, and R3 is a linear or branched alkylene group having carbon numbers of 1 to 8, wherein the quadrivalent group IV metal(M) is Ti. The chemical vapor deposition method is characterized in that a metal oxide thin film is formed by using a complex of a quadrivalent IV group metal(M) and a chemical formula M(L)2 consisting of a negative bivalent tridentate ligand(L) represented as in the following Formula 1 as a quadrivalent IV group metal precursor:£Formula 1|where each of R1 and R2 are linear or branched alkyl groups having carbon numbers of 1 to 8, and R3 is a linear or branched alkylene group having carbon numbers of 1 to 8, wherein a complex of formula Ti(L)2 in which the quadrivalent IV group metal(M) is Ti is used as a titanium precursor.