METHOD FOR ETCHING SILICON OXIDE LAYER

PURPOSE: A method for etching a silicon oxide layer is provided to improve hydrophilicity regarding a wafer, to decrease a contact angle of etchant and to reduce particles, by adding dimethylformamide(DMF) to a buffered oxide etchant(BOE) solution such that the DMF is well soluble as surfactant and has a stable characteristic and by etching the silicon oxide layer. CONSTITUTION: The silicon oxide layer formed on the wafer is etched by using wet etchant including DMF. The wet etchant is a BOE solution. DMF is a liquid state at a room temperature so that an etch rate does not change according to an additive quantity.