POST ETCH PHOTORESIST AND PROCESS OF REMOVING RESIDUE

PURPOSE: A plasma ashing processe is provided to add CHF3 to the plasma to generate more reactive species in an amount effective for removing the photoresist and post etch residues from the substrate. CONSTITUTION: A reaction chamber(20) encloses a wafer(15) with photoresist and/or post etch residue...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	WALDFRIED CARLO, BERRY IVAN LOUIS III, BAUSUM TERESA HOPE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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