POST ETCH PHOTORESIST AND PROCESS OF REMOVING RESIDUE

PURPOSE: A plasma ashing processe is provided to add CHF3 to the plasma to generate more reactive species in an amount effective for removing the photoresist and post etch residues from the substrate. CONSTITUTION: A reaction chamber(20) encloses a wafer(15) with photoresist and/or post etch residues thereon to be ashed. The wafer is supported by a chuck(12) and is preferably heated to accelerate the reaction of the photoresist and/or post etch residues with the plasma. The pressure within the reaction chamber is reduced. A plasma generating system(30) is connected to the reaction chamber(20) to provide a plasma to the interior of the chamber(20). A gas box(40) controls the flow of gases into the plasma generating system. The plasma then impacts the wafer(15), reacting with the photoresist and post etch residues on the wafer to form volatile products and/or water removable products. A vacuum pump(24) continuously removes plasma and the volatile products from the chamber(20) and maintains a constant flow of plasma over the surface of the wafer(15). Ports(26,28) can be used to analyze the plasma and the reaction of the plasma with photoresist and post etch residues on the wafer.