METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

PURPOSE: A method for fabricating a semiconductor device is provided to prevent a malfunction of a transistor by forming uniformly an oxide layer at a side of a gate electrode. CONSTITUTION: The first and the second conductive layers and the first insulating layer are formed on a semiconductor substrate(30). The first insulating layer and the second and the first conductive layers are etched selectively by using a mixing gas. A gate electrode(58) including the first insulating pattern,(53) the second conductive layer pattern(52), and the first conductive layer pattern(51) is formed by the etching process. A recess(60) is formed at a side of the gate electrode(58) by performing an over-etching process for the second conductive layer. A high temperature oxide is deposited on the semiconductor substrate in order to a high temperature oxide layer(62). The second insulating layer is formed thereon. A spacer and a gate protection layer are formed at a side of the gate electrode(58) by etching the second insulating layer and the high temperature oxide layer.