APPARATUS AND METHOD FOR DETECTING A SUBSTANCE

PURPOSE: An apparatus for reducing a quantity of vapor products and its method are provided to detect end point for a target film on a stop film. CONSTITUTION: A target film is removed by a process of generating selectively a chemical reaction product from a stop layer or from a target film. When re...

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Bibliographische Detailangaben
Hauptverfasser:	WEI CONG, GILHOOLY JAMES ALBERT, YU CHIENFAN, LI LEPING, MORGAN III. CLIFFORD OWEN, WILLIAM JOSEPH SALOWITZ
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PURPOSE: An apparatus for reducing a quantity of vapor products and its method are provided to detect end point for a target film on a stop film. CONSTITUTION: A target film is removed by a process of generating selectively a chemical reaction product from a stop layer or from a target film. When removing the target film, the end point of removal of the target film on a stop layer is detected. Also, Extracting a gas-state material from a liquid and inspecting the gas, a very low concentration of material in the liquid is detected. 정지 막 및 표적 막 중 하나와의 화학 반응 생성물(예를 들면, KOH 함유 슬러리에서 질화물 막을 갖는 웨이퍼를 연마할 때 암모니아)을 선택적으로 생성하는 공정에 의해 표적 막을 제거하고, 상기 표적 막이 제거될 때 화학 반응 생성물의 레벨을 감시하는 것에 의해서, 정지 막 상부의 표적 막의 제거의 종점을 검출한다. 또한, 액체로 부터 가스로서 존재하는 물질을 추출하고 또 가스를 감시하여 상기 물질을 검출하는 것에 의해, 액체내의 매우 낮은 농도의 물질을 검출한다.