METHOD FOR EVALUATING HYDROPHOBIC TREATMENT, METHOD FOR FORMING RESIST PATTERN, AND FORMATION SYSTEM FOR THE RESIST PATTERN

PURPOSE: To evaluate the hydrophobicity on the surface of a substrate with high reliability and optimize hydrophobic treatment conditions, in a device for forming a resist pattern. CONSTITUTION: An HMDS gas is supplied to the surface of a wafer W for hydrophobic treatment, and the wafer W is housed...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUI HIDEHUMI, ONO YUKO, HADA KEIKO, KITANO JUNICHI, KATANO TAKAYUKI
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HOLOGRAPHY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MATERIALS THEREFOR MEASURING ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS TESTING
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Beschreibung
Zusammenfassung:	PURPOSE: To evaluate the hydrophobicity on the surface of a substrate with high reliability and optimize hydrophobic treatment conditions, in a device for forming a resist pattern. CONSTITUTION: An HMDS gas is supplied to the surface of a wafer W for hydrophobic treatment, and the wafer W is housed in a sealed container 6 on a cassette stage 21 and it is conveyed to an analyzer A2 outside a device A1 for forming a resist pattern. The masses of ion kinds on the surface of the wafer W, such as CH3Si+, C3H9Si+, C3H9Si-, etc., are analyzed by using an analytical section such as TOF-SIMS, etc., thereby of the analytical equipment A2 measuring the quantity of HMDS(hexamethyl disilazane) on the surface of the wafer W. Thus, a quantity of HMDS on the surface of the wafer W can be measured, and hydrophobic treatment condition be evaluated with high reliability.