SELECTIVE DEPOSITION METHOD OF CARBON NANO-TUBE

SELECTIVE DEPOSITION METHOD OF CARBON NANO-TUBE

PURPOSE: Provided is a selective deposition method of a carbon nano-tube which is based on plasma chemical vapor deposition method so that it uses CH4 gas to produce the carbon nano-tube on a substrate at 500-800deg.C selectively. CONSTITUTION: In the selective deposition method of the carbon nano-t...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LIM, SEONG HUN, JANG, JIN, JUNG, SEOK JAE
Format: Patent
Sprache:eng ; kor
Schlagworte:
MANUFACTURE OR TREATMENT THEREOF
NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS,MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES ASDISCRETE UNITS
NANOTECHNOLOGY
PERFORMING OPERATIONS
TRANSPORTING
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Beschreibung
Zusammenfassung:PURPOSE: Provided is a selective deposition method of a carbon nano-tube which is based on plasma chemical vapor deposition method so that it uses CH4 gas to produce the carbon nano-tube on a substrate at 500-800deg.C selectively. CONSTITUTION: In the selective deposition method of the carbon nano-tube which utilizes the plasma chemical vapor deposition method, the formation method of the carbon nano-tube is characterized by forming a net between the substrate of a subject to be supported by the substrate and plasma and using hydrocarbon class gas with carbon included such as CH4, C2H2, C2H6, C3H8 or so on as a gas to generate plasma.