METHOD FOR FABRICATING OF SEMICONDUCTOR DEVICE

PURPOSE: A manufacturing method of a semiconductor device is to form a gate electrode with a low resistance, without causing damage to a gate oxide, and to simplify a manufacturing process. CONSTITUTION: A gate oxide(32) is formed on a semiconductor substrate(31). The first metal layer(33) composed...

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Bibliographische Detailangaben
1. Verfasser:	JI, SEUNG HEON
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A manufacturing method of a semiconductor device is to form a gate electrode with a low resistance, without causing damage to a gate oxide, and to simplify a manufacturing process. CONSTITUTION: A gate oxide(32) is formed on a semiconductor substrate(31). The first metal layer(33) composed of Ti/TiN is deposited on the gate oxide, and then the second metal layer(35) composed of W is deposited thereon. An insulating layer is then deposited on the second metal layer. The insulating layer is anisotropically etched using a patterned photoresist as a mask to form a capping insulating layer(36a) on the second metal layer. The second and the first metal layers are sequentially etched using the capping insulating layer as a mask to form a gate electrode. 공정을 단순화 시키면서 게이트의 저항을 줄이기에 알맞은 반도체소자의 제조방법을 제공하기 위한 것으로써, 이와 같은 목적을 달성하기 위한 반도체소자의 제조방법은 반도체기판에 게이트절연막을 형성하는 공정, 상기 게이트절연막상에 제 1, 제 2 메탈층을 차례로 형성하는 공정, 상기 제 2 메탈층상에 절연막을 형성하는 공정, 상기 절연막을 식각하여 게이트 형성 부분상측의 상기 제 2 메탈층상에 캡절연막을 형성하는 공정, 상기 캡절연막을 마스크로 상기 제 2 메탈층과 제 1 메탈층을 차례로 식각하여 게이트전극을 형성하는 공정을 포함함을 특징으로 한다.