FILM THICKNESS CONTROL USING SPECTRUM INTERFERENCE METHOD

PURPOSE: To provide a process for controlling a substrate processing operation such as a plasma etching operation. CONSTITUTION: In one embodiment of the method, a plasma is formed in a substrate processing chamber to etch a wafer in the chamber. The process uses the light emitted by the plasma as a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	DAVIDOW JED, LYMBEROPOLOUS DIMITRIS, BALASUBRAMHANYA LALITHA, SARFATY MOSHE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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