FILM THICKNESS CONTROL USING SPECTRUM INTERFERENCE METHOD

PURPOSE: To provide a process for controlling a substrate processing operation such as a plasma etching operation. CONSTITUTION: In one embodiment of the method, a plasma is formed in a substrate processing chamber to etch a wafer in the chamber. The process uses the light emitted by the plasma as a...

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Bibliographische Detailangaben
Hauptverfasser:	DAVIDOW JED, LYMBEROPOLOUS DIMITRIS, BALASUBRAMHANYA LALITHA, SARFATY MOSHE
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	PURPOSE: To provide a process for controlling a substrate processing operation such as a plasma etching operation. CONSTITUTION: In one embodiment of the method, a plasma is formed in a substrate processing chamber to etch a wafer in the chamber. The process uses the light emitted by the plasma as a wide band light source. A plurality of wavelengths reflected by the surface of the wafer to be etched are measured by a spectrometer during a plasma etching process. These measurement values are compared with values measured in the previous plasma etching operation by the use of a pattern recognition technology. One embodiment of the present invention uses a principal component analysis(PCA) technology to recognize a pattern and another embodiment uses a programmed neuro-net pattern recognition technology.