OPTIMIZATION METHOD OF CMP PROCESS BY DETECTION OF OXIDE/NITRIDE INTERFACE USING IR SYSTEM

PURPOSE: An optimization of CMP process by detection of oxide/nitride interface using an IR system is provided to monitor the CMP process with accurate and reliable controlling manner in obtaining high yields in the manufacturing process. CONSTITUTION: The chemical mechanical planarization CMP devic...

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Hauptverfasser:	WEI CONG, LI LEPING, GILHOOLY JAMES A, CLIFFORD O. MORGAN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS DRESSING OR CONDITIONING OF ABRADING SURFACES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING SEMICONDUCTOR DEVICES TRANSPORTING
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Beschreibung
Zusammenfassung:	PURPOSE: An optimization of CMP process by detection of oxide/nitride interface using an IR system is provided to monitor the CMP process with accurate and reliable controlling manner in obtaining high yields in the manufacturing process. CONSTITUTION: The chemical mechanical planarization CMP device includes platen(10) which is turned by a motor(17). On top of platen(10) is mounted a polishing pad(12) which is typically formed of a synthetic resin such as polyurethane. Opposite and in engagement with the polishing pad(12) is wafer(26) which is held in place by a carrier(34). The carrier(34) is rotated by the motor(32) and provides a downward force against the polishing pad(12). During the CMP operation, a slurry is continuously introduced to polishing pad(12) from a slurry reservoir(18) through a nozzle(24).