METHOD FOR FORMING METAL WIRING OF SEMICONDUCTOR DEVICE

PURPOSE: A method for forming a metal wiring of a semiconductor device is provided to prevent a deterioration generated at an interface of the metal wiring and a junction part, so as to supply the semiconductor device at high speed. CONSTITUTION: A semiconductor device forms a layer insulation film having an open unit, to expose a silicon substrate(10) of a metal contact forming part. The semiconductor forms a silicon epitaxial film(17) on the silicon substrate(10) within the open unit. The semiconductor device forms a nitrification film(18) on a surface of the silicon epitaxial film(17). The semiconductor device forms a Ti film(19), and a TiN film(20) on an entire structure surface. The semiconductor device changes the silicon epitaxial film(17) and the nitrification film(18) into a TiSi2 film, by performing a thermal process. The semiconductor device forms a metal film for a wiring on the entire structure surface.