METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to simplify a manufacturing process by performing the manufacturing process without using an additional etching barrier. CONSTITUTION: A lower insulating layer(31) having a contact plug(33) is formed on an upper portion...

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Bibliographische Detailangaben
Hauptverfasser:	KWON, SE HAN, KIM, JANG YEOP
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	PURPOSE: A method for forming a capacitor of a semiconductor device is provided to simplify a manufacturing process by performing the manufacturing process without using an additional etching barrier. CONSTITUTION: A lower insulating layer(31) having a contact plug(33) is formed on an upper portion of a semiconductor substrate. A carbon layer(35) is formed on the semiconductor substrate. The carbon layer(35) is patterned by performing a photo etching process. A conductive layer for storage electrode is formed on a whole face of the structure. The carbon layer(35) is removed by etching the conductive layer for storage electrode on the carbon layer(35). A hemispheral silicon is formed on the conductive layer for storage electrode in order to form a storage electrode.