METHOD FOR FORMING CAPACITOR OF SEMICONDUCTOR DEVICE

PURPOSE: A method for forming a capacitor of a semiconductor device is provided to improve a characteristic of a semiconductor by preventing a lifting phenomenon of a storage electrode. CONSTITUTION: A lower insulating layer(13) is formed on a semiconductor substrate(11). An interlayer dielectric(17), an etching barrier(19), and a sacrificial insulating layer are formed on the lower insulating layer(13). A storage electrode region is exposed and an undercut is formed under the etching barrier(19) by performing a photo etching process. The undercut is buried. A conductive layer(25) for storage electrode is formed on the whole structure. A cylindrical storage electrode is formed by etching the conductive layer(25) for storage electrode of an upper portion of the sacrificial insulating layer. The sacrificial insulating layer is removed.