MULTIPLE-WAVELENGTH OPTICAL DETECTOR ARRAY AND MANUFACTURING

PURPOSE: A multi-wavelength optical detector array and manufacturing method are provided to detect several wavelength at same wafer by making a single chip integration a multi-wavelength detector using selective MOCVD crystal growing method. CONSTITUTION: A n-InP substrate(22) and a n-InP buffer layer(23) and an absorption layer(25) to absorb a several wavelength and p-InP layer(26) is laminated in turn. The absorption layer(25) absorbs the several wavelength. A semi-insulated InP sequestering layer(24) isolates the p-InP layer(26) by wavelength absorbed. The n-InP buffer layer(23) is formed on the n-InP substrate(22). The absorption layer(25) to absorb several wavelength is grown on the n-InP buffer layer(23). The p-InP layer(26) is grown on the absorption layer(25). The semi-insulated InP sequestering layer(24) is grown after etching from the p-InP layer(26) to the n-InP buffer layer(23), and then the absorption layer(25) and the p-InP layer(26) is isolated by wavelength. The non-reflective layer(27) and electrode(21,28) is formed at the result of above stage.