METHOD FOR FABRICATING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

PURPOSE: A method for fabricating a gate electrode of a semiconductor device is provided for the formation of a gate electrode using a tungsten layer to ensure the characteristic of a gate oxidation layer and prevent from a recess of the substrate. CONSTITUTION: On a semiconductor substrate(10) having a field oxidation layer(20), a gate oxidation layer(30), a tungsten nitride layer(40), a titanium nitride layer(50), a tungsten layer(60) and a mask layer(70) are subsequently deposited. The mask layer and the tungsten layer are selectively etched by a first etch. The titanium nitride layer is selectively etched by a second etch. The tungsten nitride layer is selectively etched by a third etch by using a gas which has a good etch-selectivity to the gate oxidation layer and the substrate, to thereby form a gate electrode(100).