TUBE FOR DEPOSITING CHEMICAL VAPOR
PURPOSE: A tube for depositing chemical vapor is to integrally form a gas injecting pipe and a discharging pipe at a tube to simplify an internal structure and inject and discharge gas corresponding to a position of a wafer loaded in a boat, thereby uniformly forming a film on the wafer. CONSTITUTIO...
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| creator | AHN, JAE HYEOK YANG, CHANG JIP KIM, TAE CHEOL |
| description | PURPOSE: A tube for depositing chemical vapor is to integrally form a gas injecting pipe and a discharging pipe at a tube to simplify an internal structure and inject and discharge gas corresponding to a position of a wafer loaded in a boat, thereby uniformly forming a film on the wafer. CONSTITUTION: A gas injecting pipe(31) has a plurality of injecting ports for injecting gas. A gas discharging pipe(32) has a plurality of discharging ports for discharging internal gas. The gas-injecting pipe and the gas-discharging pipe are integrally formed at a tube(30). A rotating unit(40) is disposed at a lower portion of the tube to rotate a boat(43) in which a wafer is loaded. A partition plate is disposed at an inner portion of the gas-injecting pipe. The gas injecting ports are formed at both sides with the partition plate in the center. The rotating unit has a gas supplying port(44) for supplying purified gas and a gas discharging port(45). A discharge gas guiding plate(35) for guiding the gas to a discharging passage is disposed at an inner portion of the tube. |
| format | Patent |
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CONSTITUTION: A gas injecting pipe(31) has a plurality of injecting ports for injecting gas. A gas discharging pipe(32) has a plurality of discharging ports for discharging internal gas. The gas-injecting pipe and the gas-discharging pipe are integrally formed at a tube(30). A rotating unit(40) is disposed at a lower portion of the tube to rotate a boat(43) in which a wafer is loaded. A partition plate is disposed at an inner portion of the gas-injecting pipe. The gas injecting ports are formed at both sides with the partition plate in the center. The rotating unit has a gas supplying port(44) for supplying purified gas and a gas discharging port(45). A discharge gas guiding plate(35) for guiding the gas to a discharging passage is disposed at an inner portion of the tube.</description><edition>7</edition><language>eng ; kor</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2001</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010406&DB=EPODOC&CC=KR&NR=20010028024A$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20010406&DB=EPODOC&CC=KR&NR=20010028024A$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>AHN, JAE HYEOK</creatorcontrib><creatorcontrib>YANG, CHANG JIP</creatorcontrib><creatorcontrib>KIM, TAE CHEOL</creatorcontrib><title>TUBE FOR DEPOSITING CHEMICAL VAPOR</title><description>PURPOSE: A tube for depositing chemical vapor is to integrally form a gas injecting pipe and a discharging pipe at a tube to simplify an internal structure and inject and discharge gas corresponding to a position of a wafer loaded in a boat, thereby uniformly forming a film on the wafer. CONSTITUTION: A gas injecting pipe(31) has a plurality of injecting ports for injecting gas. A gas discharging pipe(32) has a plurality of discharging ports for discharging internal gas. The gas-injecting pipe and the gas-discharging pipe are integrally formed at a tube(30). A rotating unit(40) is disposed at a lower portion of the tube to rotate a boat(43) in which a wafer is loaded. A partition plate is disposed at an inner portion of the gas-injecting pipe. The gas injecting ports are formed at both sides with the partition plate in the center. The rotating unit has a gas supplying port(44) for supplying purified gas and a gas discharging port(45). A discharge gas guiding plate(35) for guiding the gas to a discharging passage is disposed at an inner portion of the tube.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2001</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAKCXVyVXDzD1JwcQ3wD_YM8fRzV3D2cPX1dHb0UQhzDPAP4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8d5BRgYGhgYGRhYGRiaOxsSpAgCw0SMW</recordid><startdate>20010406</startdate><enddate>20010406</enddate><creator>AHN, JAE HYEOK</creator><creator>YANG, CHANG JIP</creator><creator>KIM, TAE CHEOL</creator><scope>EVB</scope></search><sort><creationdate>20010406</creationdate><title>TUBE FOR DEPOSITING CHEMICAL VAPOR</title><author>AHN, JAE HYEOK ; YANG, CHANG JIP ; KIM, TAE CHEOL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_KR20010028024A3</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng ; kor</language><creationdate>2001</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>AHN, JAE HYEOK</creatorcontrib><creatorcontrib>YANG, CHANG JIP</creatorcontrib><creatorcontrib>KIM, TAE CHEOL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>AHN, JAE HYEOK</au><au>YANG, CHANG JIP</au><au>KIM, TAE CHEOL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>TUBE FOR DEPOSITING CHEMICAL VAPOR</title><date>2001-04-06</date><risdate>2001</risdate><abstract>PURPOSE: A tube for depositing chemical vapor is to integrally form a gas injecting pipe and a discharging pipe at a tube to simplify an internal structure and inject and discharge gas corresponding to a position of a wafer loaded in a boat, thereby uniformly forming a film on the wafer. CONSTITUTION: A gas injecting pipe(31) has a plurality of injecting ports for injecting gas. A gas discharging pipe(32) has a plurality of discharging ports for discharging internal gas. The gas-injecting pipe and the gas-discharging pipe are integrally formed at a tube(30). A rotating unit(40) is disposed at a lower portion of the tube to rotate a boat(43) in which a wafer is loaded. A partition plate is disposed at an inner portion of the gas-injecting pipe. The gas injecting ports are formed at both sides with the partition plate in the center. The rotating unit has a gas supplying port(44) for supplying purified gas and a gas discharging port(45). A discharge gas guiding plate(35) for guiding the gas to a discharging passage is disposed at an inner portion of the tube.</abstract><edition>7</edition><oa>free_for_read</oa></addata></record> |
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| language | eng ; kor |
| recordid | cdi_epo_espacenet_KR20010028024A |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | TUBE FOR DEPOSITING CHEMICAL VAPOR |
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