Integrated circuit device having a fluorine implanted oxide layer

PURPOSE: An integrated circuit device having oxide region is provided to simplify a process by a method wherein fluorine is injected to a layer of materials to form an oxide region. CONSTITUTION: A substrate(100) has a patterning layer(110), and preferably a region where a field oxide region is formed is formed in the substrate(100) by means of a photoresist mask. Fluorine is injected into a surface of the substrate(100), and preferably fluorine atoms are injected into the surface of the substrate(100) by ions injection, to form a fluorine injection region(112). The patterning layer(110) is eliminated, and the fluorine injection region(112) of the substrate(100) is thereafter oxidized, thereby growing the field oxide region and a gate oxide layer. A thickness of the field oxide region is in the range of 1000 Å; and 10,000 Å;. A thickness of the gate oxide layer is in the range of 20 Å; and 1000 Å;, and preferably in the range of 50 Å; and 500 Å;. An amount of fluorine of the field oxide region and the gate oxide layer is preferably in the range of 5*1010 atoms/cm2 and 7*1013 atoms/cm2. 집적 회로 디바이스는 실리콘 격자안에 플루오르를 주입하고 다음으로 통상적인 산화물 성장 공정에 의해 산화물 영역을 형성함으로써 형성되는 산화물 영역들을 포함한다. 산화물 성장 공정은 예를 들면 열 산화 또는 실리콘의 국부적 산화와 같을 수도 있다. 본 발명에 따라 디바이스는 플루오르 주입을 사용목적에 알맞게 만들므로써 동시에 공식화된 상이한 두께들을 갖는 산화물 층들을 갖기 위해 제조될 수도 있다.