Oxidation of silicon using fluorine implants

PURPOSE: A method of forming oxide on a certain material layer is provided to form a sufficient oxide layer, with a comparatively simplified process by injecting fluorine into a silicon lattice and thereafter forming a silicon oxide region through adoption of oxidizing process in the dry oxidizing process or wet oxidizing process. CONSTITUTION: A substrate(100) has a patterning layer(110), and the patterning layer(110) preferably forms, within the substrate(100), a region where a field oxide region(120) is formed with a photoresist mask. When fluorine indicated with the arrow mark(115) is injected to the substrate(100), fluorine atoms form a fluorine injection region(112) within the surface of the substrate(100). The preferable fluorine atom amount injected to the substrate(100) is about 1 times;1011 to 5 times;1016 atoms/cm2 and preferred energy injection amount is 1 keV to 1 MeV. After the patterning layer(110) is removed, the fluorine injecting region(112) of the substrate(100) is processed with the oxidizing processing to cause both the field oxide region(120) and a gate oxide layer(125) to grow. 플루오르를 실리콘 격자로 확산해서 산화물 영역을 형성하고 연속해서 통상의 산화물 성장 공정에 의해서 산화물 영역을 형성함으로써 기판을 산화하는 방법이 개시되고 있다. 산화물 성장 공정은 실리콘의 국부 산화 또는 열적 산화 등과 같은 성장 공정이다. 본 발명에 따른 공정에 의하면 플루오르 이온 주입을 조건에 맞게 제조함으로써 동시에 상이한 두께를 가진 산화물의 동시 성장이 가능하게 된다.