INTEGRATED LOW K DIELECTRICS AND ETCH STOPS

PURPOSE: A method for depositing and etching a dielectric layer is provided to control a dielectric constant with low and etching speed changes 3:1 for forming horizontal mutual interconnects. CONSTITUTION: Quantity of carbon or hydrogen in a dielectric layer fluctuates due to the change in depositi...

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Hauptverfasser:	LIU KUO-WEI, CHEUNG DAVID W, YIN GERALD ZHEYAO, MOGHADAM FARHAD, YOST DENNIS J, MIN YU MELISSA, BJORKMAN CLAES H, YAU WAI-FAN, CHOPRA NASREEN GAZALA, KIM YUNSANG, TANG SUM-YEE BETTY, SHAN HONGQING, HUANG JUDY H
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	AGRICULTURE ANIMAL HUSBANDRY BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FERTILISING FISHING FORESTRY HUMAN NECESSITIES HUNTING INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY PLANTING SEMICONDUCTOR DEVICES SOWING SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION TRAPPING
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