METHOD FOR FORMING LOW DIELECTRIC INSULATING FILM IN SEMICONDUCOTR DEVICES

PURPOSE: A low dielectric insulating film formation method in semiconductor devices is provided to be capable of minimizing the dielectric constant of an insulating film, by making nitrogen gas within the insulating film trapped of a void shape. CONSTITUTION: A metal line(12) is formed on a semicond...

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Bibliographische Detailangaben

Hauptverfasser:	LIM, BI O, SON, GI GEUN
Format:	Patent
Sprache:	eng ; kor
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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