METHOD FOR FORMING LOW DIELECTRIC INSULATING FILM IN SEMICONDUCOTR DEVICES

PURPOSE: A low dielectric insulating film formation method in semiconductor devices is provided to be capable of minimizing the dielectric constant of an insulating film, by making nitrogen gas within the insulating film trapped of a void shape. CONSTITUTION: A metal line(12) is formed on a semiconductor substrate(11). After the semiconductor substrate(11) is loaded onto the high density plasma deposition equipment, deposition source gas(13) and etch source gas(14) are injected, wherein the etch source gas employs nitrogen gas. Next, an insulating film(15) is deposited by high density plasma, so that nitrogen gas at the insulating film portion is trapped by means of etch source gas(14). Then, a low dielectric insulating film(15) is formed on the semiconductor substrate(11) and the metal line(12).