SEMICONDUCTOR DEVICE

PURPOSE: A semiconductor device is to provide excellent data maintenance characteristic, by making a word line side wall spacer in a field region extended to an active region, and by forming a word line inside the filed region. CONSTITUTION: A semiconductor device comprises a semiconductor substrate(20), an impurity diffusion region(25), the first and second gate lines, an interlayer dielectric, a storage electrode node, a dielectric layer and a plate electrode. The substrate is divided into an active region and a field region by a field insulating layer. The impurity diffusion region is formed on the active region. The first gate line includes the first and second side wall spacers. The first side wall spacer insulates a side of the impurity diffusion region and is intervened by a gate insulating layer, of which an upper surface is insulated by a cap insulating layer. The second sidewall spacer insulates the rest of side surface of the resultant structure. The second gate line includes the third and fourth side wall spacers. The third side wall spacer insulates a side of the impurity diffusion region and is intervened by a gate insulating layer, of which an upper surface is insulated by a cap insulating layer. The fourth side wall spacer insulates the rest of side surface of the resultant structure. An interlayer dielectric covers the active region and field region. A storage electrode node electrically contacts the impurity diffusion region through the interlayer dielectric. A dielectric layer and a plate electrode are formed on the surface of the storage electrode node.